5n60 Mosfet

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SVF5N60T/F/D/MJDatasheet 5A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. 5N60 datasheet, 5N60 datasheets, 5N60 pdf, 5N60 circuit: UTC - 4.5 Amps, 600 Volts N-CHANNEL MOSFET,alldatasheet, datasheet, Datasheet search site for Electronic.

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5N60 Datasheet PDF - Inchange Semiconductor

Part Number5N60
DescriptionN-Channel MOSFET Transistor
Manufacturers Inchange Semiconductor　
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isc N-Channel MOSFET Transistor
5N60
·Drain Current ID= 5.6A@ TC=25℃
: VDSS= 600V(Min)
·APPLICATIONS
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
ARAMETER
VDSS
600 V
±30
ID Drain Current-continuous@ TC=25℃ 5.6 A
Pulse Drain Current
Ptot Total Dissipation@TC=25℃
Tj Max. Operating Junction Temperature 150 ℃
-55~150 ℃
SYMBOL
MAX UNIT
1.67 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W
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5n60 Mosfet Wiring


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Featured Datasheets

Part NumberDescriptionManufacturers
5N60The function is N-Channel Power MOSFET.
nELL
5N60The function is N-Channel MOSFET Transistor.
Inchange Semiconductor
5N60The function is N-CHANNEL MOSFET.
Unisonic Technologies

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Transistor Mosfet 5n60



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5N60 Datasheet Preview

5A 600V N-channel Enhancement Mode Power MOSFET

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5A 600V N-channel Enhancement Mode Power MOSFET
These N-channel Enhanced VDMOSFETs, is obtained by
the self-aligned planar technology which reduce the
conduction loss, improve switching performance and
enhance the avalanche energy. Which accords with the
VDSS = 600V
ID = 5A
● Fast Switching
● Low Gate Charge(Typical:19.5nC)
● Low Reverse Transfer Capacitances(Typical:7.5pF)
● 100% ΔVDS Test
● used in various power switching circuit for system
● Power switch circuit of electron ballast and adaptor.
TO-263 TO-252B TO-251B
4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted)
Symbol
5N60/I5N60/E5N60
Drian-Source Voltage
Gate-Drain Voltage
Drain Current(continuous)
（T=100℃）
3.6
Single Pulse Avalanche Energy(Note 5)
Avalanche Current(Note 1)
IDM
EAR
dv/dt
270
2.5
Total Dissipation
TC=25℃
Ptot
85
storage Temperature
Tstg -55～150
TL
F5N60
34
V
A
A
mJ
V/ns
W
℃
4.2 Thermal Characteristics
Thermal Resistance Junction to Case-sink
Symbol
RthJA
5N60/I5N60/E5N60
1.47
F5N60
62.5
℃/W
ROUM Semiconductor Technology CO.,LTD.
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5N60 Datasheet Preview

5A 600V N-channel Enhancement Mode Power MOSFET

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4.3 Electrical Characteristics(Tc=25℃,unless otherwise noted)
Symbol
Value
Off Characteristics
Breakdown Voltage
ID=250μA,VGS=0V
--
Leakage Current
VDS=600V,VGS=0V,TC=25℃
--
-- 1
Gate-to-Source
IGSSF
-- -- 100
Reverse Leakage
VGS=-30V
On Characteristics(Note 3)
VGS(th)
2 -- 4
ance
VGS=10V,ID=2.5A
Dynamic Characteristics(Note 4)
uctance
VDS=30V,ID=5A
Input Capacitance
-- 720 --
Coss
acitance
Switching Characteristics(note4)
td(on)
tr
td(off)
tf
--
--
ID=5A,
VGS=10V,
-- 9.5 --
-- 34 --
Total Gate Charge
-- 19.5 --
Gate-to-Drain(“Miller”)C
Qgs
ID=5A,VDD=300V,VGS=10V
4 --
Drain-Source Diode Characteristics
(Note 3)
VGS=0V,IS=5A
Diode Forward Current
IS
5
Reverse Recovery
trr
TJ=25℃,IF=5A,
-- 203 --
Units
μA
nA
V
S
nS
V
nS
Notes：
1: Repetitive rating, pulse width limited by maximum junction temperature.
3: Pulse width ≤ 300μs, duty cycle ≤ 2%.
4: Guaranteed by design, not subject to production.
5. L=10mH,ID=7.4A,VDD=50V,VGATE=600V,Start TJ=25℃.
ROUM Semiconductor Technology CO.,LTD.
Page 2 of 12
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5n60 Mosfet Equivalent